Attributes

Key Value
Base Product NumberTP0610
CategoryDiscrete Semiconductor .
Current - Continuous Dr.270mA (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .3 nC @ 15 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-2.
Power Dissipation (Max)800mW (Ta)
Product StatusObsolete
Rds On (Max) @ Id, Vgs6Ohm @ 500mA, 10V
SeriesTrenchFET?
Supplier Device PackageTO-226AA (TO-92)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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