Attributes

Key Value
Channel ModeEnhancement
ConfigurationDual
Current Continuous Drai.60A
Drain to Source Voltage.40V
Fall Time15 ns
FET FeatureStandard
FET Type2 N-Channel (Dual)
Forward Transconductanc.105 S
Gate Charge Qg Vgs65nC @ 10V
Id Continuous Drain Cur.60 A
In-stock3844
Input Capacitance Ciss .2300pF @ 20V
Maximum Operating Tempe.+ 150 C
Minimum Operating Tempe.- 55 C
Mounting StyleSMD/SMT
Mounting TypeSurface Mount
Number of Channels2 Channel
Operating Temperature-55?C ~ 150?C (TJ)
Package CasePowerPAKR SO-8 Dual
Package/CaseSOP-8
Pd Power Dissipation46 W
Power Max46W
Product CategoriesTransistors - FETs, MOS.
Qg Gate Charge21 nC
Rds On Drain Source Res.5.8 mOhms
Rds On Max Id Vgs5.8 mOhm @ 18.5A, 10V
Rise Time19 ns
RoHs StatusLead free / RoHS Compli.
Supplier Device PackagePowerPAKR SO-8 Dual
TechnologySi
Transistor PolarityN-Channel
Transistor Type2 N-Channel
Typical Turn Off Delay .40 ns
Typical Turn On Delay T.25 ns
Vds Drain Source Breakd.40 V
Vgs Gate Source Voltage20 V
Vgs th Max Id2.5V @ 250?A
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