Yangzhou Yangjie Electronic Technology Co.,Ltd YJL02N10A-F2-0000HF

mpnYJL02N10A-F2-0000HF
brandname: Yangzhou Yangjie Electronic Technology Co.,Ltd
manufacturername: Yangzhou Yangjie Electronic Technology Co.,Ltd

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	2A (Ta)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	9.56 nC @ 10 V
Input Capacitance (Ciss.	387 pF @ 10 V
Mfr	Yangzhou Yangjie Electr.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Power Dissipation (Max)	1.3W (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	280mOhm @ 2A, 10V
Series	-
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	3V @ 250?A