Infineon Technologies BSC0805LSATMA1

mpnBSC0805LSATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Base Product Number	BSC0805
Category	Discrete Semiconductor .
Current - Continuous Dr.	79A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	20 nC @ 4.5 V
Input Capacitance (Ciss.	2700 pF @ 50 V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Cut Tape (CT)
Package / Case	8-PowerTDFN
Part Status	Not For New Designs
Power Dissipation (Max)	83W (Tc)
Rds On (Max) @ Id, Vgs	7mOhm @ 40A, 10V
Series	OptiMOS? 5
Supplier Device Package	PG-TDSON-8-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.3V @ 49?A