Infineon Technologies IPB075N04LGATMA1

mpnIPB075N04LGATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	4.5V, 10V
Drain to Source Voltage.	36 nC @ 10 V
Drive Voltage (Max Rds .	7.5mOhm @ 50A, 10V
FET Feature	56W (Tc)
FET Type	MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .	2800 pF @ 25 V
Mfr	Infineon Technologies
Mounting Type	D?PAK (TO-263AB)
Operating Temperature	Surface Mount
Package	Obsolete
Package / Case	40 V
Part Status	N-Channel
Power Dissipation (Max)	-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs	2V @ 20?A
Series	Tape & Reel (TR)
Supplier Device Package	TO-263-3, D?Pak (2 Lead.
Technology	50A (Tc)
Vgs (Max)	-
Vgs(th) (Max) @ Id	?20V