Infineon IPN60R600P7SATMA1

B077ZX2TNL

INFINEON IPN60R600P7SATMA1 Single N-Channel 600 V 600 mOhm 9 nC CoolMOS Power Mosfet - SOT-223 - 3000 item(s)

INFINEON IPN60R600P7SATMA1 Single N-Channel 600 V 600 mOhm 9 nC CoolMOS Power Mosfet - SOT-223 - 3000 item(s)zoom

Attributes

Key Value
Base Product NumberIPN60R600
CasePG-SOT223
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Tc)
Drain current4A
Drain to Source Voltage.600 V
Drain-source voltage600V
Drive Voltage (Max Rds .10V
Features of semiconduct.ESD protected gate
FET Feature-
FET TypeN-Channel
Gate charge9nC
Gate Charge (Qg) (Max) .9 nC @ 10 V
Gate-source voltage?20V
Input Capacitance (Ciss.363 pF @ 400 V
Kind of channelenhanced
ManufacturerINFINEON TECHNOLOGIES
MfrINFINEON TECHNOLOGIES
MountingSMD
Mounting TypeSurface Mount
On-state resistance0.6?
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Polarisationunipolar
Power dissipation7W
Power Dissipation (Max)7W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs600mOhm @ 1.7A, 10V
SeriesCoolMOS? P7
Supplier Device PackagePG-SOT223
TechnologyMOSFET (Metal Oxide), C.
Type of transistorN-MOSFET
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 80?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics60925110.33630003000Infineon0.336 @ 3000
thumbzoomTMEIPN60R600P7S0.3913000INFINEON TECHNOLOGIES0.39 @ 3000
RS Delivers220-74360.490813000Infineon0.4908 @ 3000
Digi-Key75646600.5655713000Infineon Technologies0.56557 @ 3000
thumbzoomNewark93AC71190.87153000INFINEON0.871 @ 3000
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