Infineon Technologies IPN60R600P7SATMA1

mpnIPN60R600P7SATMA1
brandname: Infineon Technologies
manufacturername: Infineon Technologies

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	6A (Tc)
Drain to Source Voltage.	600V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	9nC @ 10V
Input Capacitance (Ciss.	363pF @ 400V
Mfr	Infineon Technologies
Mounting Type	Surface Mount
Operating Temperature	-40?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-261-3
Part Status	Active
Power Dissipation (Max)	7W (Tc)
Rds On (Max) @ Id, Vgs	600mOhm @ 1.7A, 10V
Series	CoolMOS? P7
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4V @ 80?A