Attributes

Key Value
Base Product NumberIRF1010
CategoryDiscrete Semiconductor .
Current - Continuous Dr.85A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .120 nC @ 10 V
Input Capacitance (Ciss.3210 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)180W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs11mOhm @ 43A, 10V
SeriesHEXFET?
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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