Infineon IRL2910PBF

B00DWIAF9S

Infineon N Channel Mosfet, 100V, 55A, To-220Ab - IRL2910PBF

Infineon N Channel Mosfet, 100V, 55A, To-220Ab - IRL2910PBFzoom

Attributes

Key Value
Base Product NumberIRL2910
CategoryDiscrete Semiconductor .
Channel TypeN
ConfigurationSingle
Current - Continuous Dr.55A (Tc), 4V, 10V
Dimensions10.54 x 4.69 x 15.24 mm
Drain Current55 A
Drain to Source On Resi.0.04 Ohms
Drain to Source Voltage100 V
Drain to Source Voltage.100 V, 140 nC @ 5 V
Drive Voltage (Max Rds .26mOhm @ 29A, 10V
Drive Voltage (Max Rds .4V, 10V
FET Feature200W (Tc), -
FET TypeMOSFET (Metal Oxide), N.
Forward Transconductance28 S
Forward Voltage, Diode1.3 V
Gate Charge (Qg) (Max) .140 nC @ 5 V, 3700 pF @.
Gate to Source Voltage? 16 V
Height0.6" (15.24mm)
Input Capacitance3700 pF @ 25 V
Input Capacitance (Ciss.3700 pF @ 25 V
Length0.414 in
Maximum Operating Tempe.+175 ?C
MfrInfineon Technologies
Minimum Operating Tempe.-55 ?C
Mounting TypeTO-220AB, Through Hole
Number of Elements per .1
Number of Pins3
Operating Temperature-55?C ~ 175?C (TJ), Thr.
PackageActive, Tube
Package / Case100 V, TO-220-3
Package TypeTO-220AB
Part StatusN-Channel
PolarizationN-Channel
Power Dissipation200 W
Power Dissipation (Max)-55?C ~ 175?C (TJ), 200.
Product HeaderHexfet? Power MOSFET
Product StatusActive
Rds On (Max) @ Id, Vgs26mOhm @ 29A, 10V, 2V @.
SeriesHEXFET?, Tube, HEXFET S.
Supplier Device PackageTO-220AB, TO-220-3
Technology55A (Tc), MOSFET (Metal.
Temperature Operating R.-55 to +175 ?C
Total Gate Charge140 nC
Turn Off Delay Time49 ns
Turn On Delay Time11 ns
Typical Gate Charge @ V.Maximum of 140 nC @ 5 V
Vgs (Max)?16V, -
Vgs(th) (Max) @ Id?16V, 2V @ 250?A
Voltage, Breakdown, Dra.100 V
Width0 in

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics69237672.136125Infineon2.136 @ 25
RS Delivers543-1229P2.592125Infineon2.592 @ 25
Digi-Key8121782.9076125Infineon Technologies2.9076 @ 25
us.rs-online.com700170853.18125Infineon3.18 @ 25
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