Attributes

Key Value
Base Product NumberMSCSM70
CategoryDiscrete Semiconductor .
Current - Continuous Dr.124A (Tc)
Drain to Source Voltage.700V
FET FeatureSilicon Carbide (SiC)
FET Type2 N Channel (Phase Leg)
Gate Charge (Qg) (Max) .215nC @ 20V
Input Capacitance (Ciss.4500pF @ 700V
MfrMicrochip Technology
Mounting TypeChassis Mount
Operating Temperature-40?C ~ 175?C (TJ)
PackageTube
Package / CaseModule
Part StatusActive
Power - Max365W (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 40A, 20V
Series-
Supplier Device PackageSP1F
Vgs(th) (Max) @ Id2.4V @ 4mA
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