Attributes

Key Value
@Ic (test) (A)1.0m
@VCE (V)10
CaseTO92
Collector Capacitance (.1.7 pF
Derate Above 25?C8.0m
Forward Current Transfe.67
Ic Max. (A)30m
Icbo Max. @Vcb Max. (A)100n
ManufacturerMotorola Semiconductor
Max. hFE220
Max. Operating Junction.150 ?C
Max. PD (W)250m
Maximum Collector Curre.0.03 A
Maximum Collector Power.0.3 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.20 V
Maximum Emitter-Base Vo.5 V
Min hFE65
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-16
PolarityNPN
SKU79865
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.260M
Transition Frequency (f.130 MHz
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO20
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