Attributes

Key Value
@Ic (A)20
@VCE (test) (V)10
C(ob) (F)650n
CaseTO92
Collector Capacitance (.0.9 pF
Derate (Amb) (W/?C)4.0
Forward Current Transfe.40
hfe40
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)100n
ManufacturerON Semiconductor
Max. Operating Junction.150 ?C
Max. PD (W)500m
Maximum Collector Curre.0.03 A
Maximum Collector Power.0.5 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.20 V
Maximum Emitter-Base Vo.3 V
Oper. Temp (?C) Max.150
Pinout Equivalence Numb.3-16
PolarityNPN
SKU79897
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.600M
Transition Frequency (f.600 MHz
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO20
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