Attributes

Key Value
Base Product NumberNVBGS4
CategoryDiscrete Semiconductor .
Current - Continuous Dr.20A (Ta), 185A (Tc)
Drain to Source Voltage.150 V
Drive Voltage (Max Rds .8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .88.9 nC @ 10 V
Input Capacitance (Ciss.7285 pF @ 75 V
MfrON Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-7, D?Pak (6 Lead.
Part StatusActive
Power Dissipation (Max)3.7W (Ta), 316W (Tc)
Rds On (Max) @ Id, Vgs4.1mOhm @ 104A, 10V
SeriesAutomotive, AEC-Q101
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 574?A
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