Attributes

Key Value
@Ic (A)1.0m
@VCE (test) (V)10
C(ob) (F).75p
CaseTO106
Collector Capacitance (.1 pF
Derate (Amb) (W/?C)3.0m
Forward Current Transfe.40
hfe70
Ic Max. (A)30m
Icbo Max. @Vcb Max. (A)1n
ManufacturerST Microelectronics - S.
Max. Operating Junction.125 ?C
Max. PD (W)300m
Maximum Collector Curre.0.03 A
Maximum Collector Power.0.3 W
Maximum Collector-Base .30 V
Maximum Collector-Emitt.30 V
Maximum Emitter-Base Vo.4 V
Oper. Temp (?C) Max.125
Pinout Equivalence Numb.3-14
PolarityNPN
SKU136328
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.250M
Transition Frequency (f.250 MHz
TypeTransistor Silicon NPN
Vbr CBO30
Vbr CEO30
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