Attributes

Key Value
Base Product NumberSTD35
CategoryDiscrete Semiconductor .
Current - Continuous Dr.35A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .6 nC @ 4.5 V
Input Capacitance (Ciss.725 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)35W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs16mOhm @ 15A, 10V
SeriesSTripFET? V
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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