Attributes

Key Value
Base Product NumberCSD13306
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.5A (Ta)
Drain to Source Voltage.12 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .11.2 nC @ 4.5 V
Input Capacitance (Ciss.1370 pF @ 6 V
MfrTexas Instruments
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case6-UFBGA, DSBGA
Part StatusActive
Power Dissipation (Max)1.9W (Ta)
Rds On (Max) @ Id, Vgs10.2mOhm @ 1.5A, 4.5V
SeriesNexFET?
Supplier Device Package6-DSBGA (1x1.5)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?10V
Vgs(th) (Max) @ Id1.3V @ 250?A
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