Toshiba Semiconductor and Storage SSM3J108TU(TE85L)

mpnSSM3J108TU(TE85L)
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	SSM3J108
Category	Discrete Semiconductor .
Current - Continuous Dr.	1.8A (Ta)
Drain to Source Voltage.	20 V
Drive Voltage (Max Rds .	1.8V, 4V
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss.	250 pF @ 10 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	3-SMD, Flat Leads
Power Dissipation (Max)	500mW (Ta)
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	158mOhm @ 800mA, 4V
Series	U-MOSIII
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?8V
Vgs(th) (Max) @ Id	1V @ 1mA