Transphorm TP65H050WS

mpnTP65H050WS
brandname: Transphorm
manufacturername: Transphorm

Attributes

Key	Value
Base Product Number	TP65H050
Category	Discrete Semiconductor .
Current - Continuous Dr.	34A (Tc)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	12V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	24 nC @ 10 V
Input Capacitance (Ciss.	1000 pF @ 400 V
Mfr	Transphorm
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-247-3
Power Dissipation (Max)	119W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	60mOhm @ 22A, 10V
Series	-
Supplier Device Package	TO-247-3
Technology	GaNFET (Cascode Gallium.
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.8V @ 700?A