B00LQQSFYA

VISHAY SILICONIX IRL630SPBF N CHANNEL MOSFET, 200V, 9A, D2-PAK (10 pieces)

VISHAY SILICONIX IRL630SPBF N CHANNEL MOSFET, 200V, 9A, D2-PAK (10 pieces)zoom

Attributes

Key Value
Base Product NumberIRL630
CategoryDiscrete Semiconductor .
Circuit TypeN-Channel
Current - Continuous Dr.9A (Tc)
Drain Current Id(rms)9 A
Drain Source Voltage Vds200 VDC
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .4V, 5V
Fall Time tf33 ns
Family SeriesVishay Transistors, D2P.
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .40 nC @ 10 V
Gate Leakage Current0.1 ?A
Gate Source Voltage Vgss10 VDC
Gross Weight0 lbs
Input Capacitance (Ciss.1100 pF @ 25 V
Item NumberIRL630SPBF
ManufacturerVishay
Manufacturer Part NumberIRL630SPBF
MfrVishay Siliconix
Mounting TypeSurface Mount
Net Weight0 lbs
Operating Temperature-55?C ~ 150?C (TJ)
PackageTO-263, Tube
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Product SeriesD2PAK
Product StatusActive
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 5V
rDS(on)400 mOhm
Rise Time tr57 ns
RoHSYes
Series-
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Trr230 ns
Turn Off Delay Time38 ns
Turn On Delay Time8 ns
Typ. Vgs(th)1.5 VDC
Vgs (Max)?10V
Vgs(th) (Max) @ Id2V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
thumbzoomGalcoIRL630SPBF-VISH1.15100086Vishay1.15 @ 1000
thumbzoomNewark63J78171.56100064VISHAY1.56 @ 1000
thumbzoomRadwellIRL630SPBF1.75100086VISHAY1.75 @ 1000
HotendaH18142662.5112935Vishay/Siliconix2.51 @ 1
Future Electronics75076352.5681700Vishay2.568 @ 1
Digi-Key8120083.174186Vishay Siliconix3.174 @ 1
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev