Attributes

Key Value
Base Product NumberSIHA17
CategoryDiscrete Semiconductor .
Current - Continuous Dr.7A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .62 nC @ 10 V
Input Capacitance (Ciss.1260 pF @ 100 V
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3 Full Pack
Part StatusActive
Power Dissipation (Max)34W (Tc)
Rds On (Max) @ Id, Vgs290mOhm @ 8.5A, 10V
Series-
Supplier Device PackageTO-220 Full Pack
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
prev