Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Collector (Ic.500 mA
Current - Collector Cut.100nA (ICBO)
DC Current Gain (hFE) (.25 @ 10mA, 10V
Frequency - Transition40MHz
MfrDiodes Incorporated
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Box (TB)
Package / CaseE-Line-3, Formed Leads
Part StatusActive
Power - Max680 mW
Series-
Supplier Device PackageE-Line (TO-92 compatibl.
Transistor TypeNPN - Avalanche Mode
Vce Saturation (Max) @ .500mV @ 1mA, 10mA
Voltage - Collector Emi.100 V
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