Attributes

Key Value
Current - Continuous Dr.1A (Ta)
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .10 nC @ 10 V
Input Capacitance (Ciss.335 pF @ 25 V
MfrFairchild Semiconductor
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
Package / CaseTO-261-4, TO-261AA
Part Status-
Power Dissipation (Max)2.52W (Ta)
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 10V
Series-
Supplier Device PackageSOT-223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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