Attributes

Key Value
Base Product NumberIPB80N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Tc)
DescriptionMOSFET N-CH 55V 80A TO2.
Detailed DescriptionN-Channel 55 V 80A (Tc).
Digi-Key Part NumberIPB80N06S2L07ATMA1TR-ND.
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .130 nC @ 10 V
Input Capacitance (Ciss.3160 pF @ 25 V
ManufacturerInfineon Technologies
Manufacturer Product Nu.IPB80N06S2L07ATMA1
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)210W (Tc)
Product StatusDiscontinued at Digi-Key
Rds On (Max) @ Id, Vgs6.7mOhm @ 60A, 10V
SeriesOptiMOS?
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2V @ 150?A
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev