Attributes

Key Value
Base Product NumberIPD50P03
CategoryDiscrete Semiconductor .
Current - Continuous Dr.50A (Tc)
Drain to Source Voltage.30 V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .55 nC @ 10 V
Input Capacitance (Ciss.3770 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusActive
Power Dissipation (Max)58W (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 50A, 10V
SeriesAutomotive, AEC-Q101, O.
Supplier Device PackagePG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+5V, -16V
Vgs(th) (Max) @ Id2V @ 85?A
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