mpn
IPD50P03P4L11ATMA2
brand
name: Infineon Technologies
manufacturer
name: Infineon Technologies
Attributes
Key
Value
Base Product Number
IPD50P03
Category
Discrete Semiconductor .
Current - Continuous Dr.
50A (Tc)
Drain to Source Voltage.
30 V
FET Feature
-
FET Type
P-Channel
Gate Charge (Qg) (Max) .
55 nC @ 10 V
Input Capacitance (Ciss.
3770 pF @ 25 V
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
-55?C ~ 175?C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-252-3, DPak (2 Leads.
Part Status
Active
Power Dissipation (Max)
58W (Tc)
Rds On (Max) @ Id, Vgs
10.5mOhm @ 50A, 10V
Series
Automotive, AEC-Q101, O.
Supplier Device Package
PG-TO252-3-11
Technology
MOSFET (Metal Oxide)
Vgs (Max)
+5V, -16V
Vgs(th) (Max) @ Id
2V @ 85?A