Attributes

Key Value
Base Product NumberIPS60R600
CategoryDiscrete Semiconductor .
Current - Continuous Dr.6A (Tc)
Drain to Source Voltage.650V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .8.5nC @ 10V
Input Capacitance (Ciss.344pF @ 400V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-40?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-251-3 Stub Leads, IP.
Part StatusActive
Power Dissipation (Max)31W (Tc)
Rds On (Max) @ Id, Vgs600mOhm @ 1.7A, 10V
SeriesCoolMOS?PFD7
Supplier Device PackagePG-TO251-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 80?A
prev