Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11.5A (Tc)
Drain to Source Voltage.12V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .38nC @ 4.5V
Input Capacitance (Ciss.3529pF @ 10V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm.
Part StatusObsolete
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs14mOhm @ 11.5A, 4.5V
SeriesHEXFET?
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id900mV @ 250?A
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