SI2302DDS-T1-GE3

B011NND6GC

VISHAY SILICONIX SI2302DDS-T1-GE3 MOSFET, N CH, 20V, 2.6A, SOT-23-3 (10 pieces)

VISHAY SILICONIX SI2302DDS-T1-GE3 MOSFET, N CH, 20V, 2.6A, SOT-23-3 (10 pieces)zoom

Attributes

Key Value
Base Product NumberSI2302
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.9A (Tj)
DescriptionMOSFET N-CH 20V 2.9A SO.
Detailed DescriptionN-Channel 20 V 2.9A (Tj.
Digi-Key Part NumberSI2302DDS-T1-GE3TR-ND -.
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .5.5 nC @ 4.5 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SI2302DDS-T1-GE3
Manufacturer Standard L.63 Weeks
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)710mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs57mOhm @ 3.6A, 4.5V
SeriesTrenchFET?
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id850mV @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics80458500.088923000250Vishay0.08892 @ 3000
RS Delivers146-44370.1752112000Vishay0.1752 @ 250
thumbzoomNewark40X86960.292511697VISHAY0.292 @ 250
thumbzoomDigi-Key65950100.329761250Vishay Siliconix0.32976 @ 250
AmazonTPB011NNDESC5.9912502VISHAY SILICONIX5.99 @ 250
AmazonSCB011NNDAZO16.591250VISHAY SILICONIX16.59 @ 250
© 2025 · Data Alchemy · Version 60 · ts:1760052239
prev