Attributes

Key Value
Base Product NumberSTB200N
CategoryDiscrete Semiconductor .
Current - Continuous Dr.120A (Tc)
DescriptionMOSFET N-CH 40V 120A I2.
Detailed DescriptionN-Channel 40 V 120A (Tc.
Digi-Key Part Number497-3512-5-ND
Drain to Source Voltage.40 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .210 nC @ 10 V
Input Capacitance (Ciss.5100 pF @ 25 V
ManufacturerSTMicroelectronics
Manufacturer Product Nu.STB200NF04-1
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-262-3 Long Leads, I?.
Power Dissipation (Max)310W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.7mOhm @ 90A, 10V
SeriesSTripFET? II
Supplier Device PackageI2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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