STMicroelectronics STB33N65M2

B077BQ1JXY

ST MICROELECTRONICS STB33N65M2 650 V, 24A, 0.117 Ohm typ., N-ch D2PAK MDmesh M2 Power MOSFET - 1000 item(s)

ST MICROELECTRONICS STB33N65M2 650 V, 24A, 0.117 Ohm typ., N-ch D2PAK MDmesh M2 Power MOSFET - 1000 item(s)zoom

Attributes

Key Value
Base Product NumberSTB33
CategoryDiscrete Semiconductor .
Current - Continuous Dr.24A (Tc), 10V
Drain to Source Voltage.650 V, 41.5 nC @ 10 V
Drive Voltage (Max Rds .140mOhm @ 12A, 10V
Drive Voltage (Max Rds .10V
ECCN EUEAR99
ECCN USD2PAK
FET Feature-, 190W (Tc)
FET TypeMOSFET (Metal Oxide), N.
Gate Charge (Qg) (Max) .1790 pF @ 100 V, 41.5 n.
GradeEcopack2
Input Capacitance (Ciss.1790 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeD2PAK, Surface Mount
Operating Temperature150?C (TJ), Surface Mou.
PackageActive, Tape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Package NameIndustrial
Packing TypeNEC
Part StatusN-Channel
Power Dissipation (Max)150?C (TJ), 190W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs140mOhm @ 12A, 10V, 4V .
RoHs compliantTape And Reel
SeriesTape & Reel (TR), MDmes.
Supplier Device PackageTO-263-3, D?Pak (2 Lead.
Technology24A (Tc), MOSFET (Metal.
Vgs (Max)?25V, -
Vgs(th) (Max) @ Id?25V, 4V @ 250?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
HotendaH18212641.5411000STMicroelectronics1.54 @ 1000
Future Electronics50907222.26810001000STMicroelectronics2.268 @ 1000
thumbzoomst.comSTB33N65M22.4311000STMicroelectronics2.43 @ 1000
Digi-Key52446873.21222611000STMicroelectronics3.212226 @ 1000
thumbzoomNewark69AH26743.2811000STMICROELECTRONICS3.28 @ 1000
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