STMicroelectronics STD9NM50N-1

mpnSTD9NM50N-1
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	5A (Tc)
Drain to Source Voltage.	500V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	20nC @ 10V
Input Capacitance (Ciss.	570pF @ 50V
Mfr	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Tube
Package / Case	TO-251-3 Short Leads, I.
Part Status	Obsolete
Power Dissipation (Max)	70W (Tc)
Rds On (Max) @ Id, Vgs	560mOhm @ 3.7A, 10V
Series	MDmesh?
Supplier Device Package	I-PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?25V
Vgs(th) (Max) @ Id	4V @ 250?A