Toshiba Semiconductor and Storage SSM6K810R,LF

mpnSSM6K810R,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	3.5A (Ta)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	3.2 nC @ 4.5 V
Input Capacitance (Ciss.	430 pF @ 15 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	175?C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1.5W (Ta)
Rds On (Max) @ Id, Vgs	69mOhm @ 2A, 10V
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 100?A