Attributes

Key Value
Base Product NumberIRL630
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9A (Tc)
DescriptionMOSFET N-CH 200V 9A D2P.
Detailed DescriptionN-Channel 200 V 9A (Tc).
Digi-Key Part NumberIRL630STRR-ND - Tape & .
Drain to Source Voltage.200 V
Drive Voltage (Max Rds .4V, 5V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .40 nC @ 10 V
Input Capacitance (Ciss.1100 pF @ 25 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.IRL630STRR
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 5V
Series-
Supplier Device PackageD?PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?10V
Vgs(th) (Max) @ Id2V @ 250?A
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