Attributes

Key Value
Base Product NumberSIHD240
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Tc)
DescriptionMOSFET N-CH 600V 12A DP.
Detailed DescriptionN-Channel 600 V 12A (Tc.
Digi-Key Part NumberSIHD240N60E-GE3-ND
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .23 nC @ 10 V
Input Capacitance (Ciss.783 pF @ 100 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SIHD240N60E-GE3
Manufacturer Standard L.34 Weeks
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads.
Power Dissipation (Max)78W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs240mOhm @ 5.5A, 10V
SeriesE
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 250?A
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