Attributes

Key Value
Base Product NumberDMN2058
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.6A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .7.7 nC @ 10 V
Input Capacitance (Ciss.281 pF @ 10 V
MfrDiodes Incorporated
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Power Dissipation (Max)1.13W
Product StatusActive
Rds On (Max) @ Id, Vgs35mOhm @ 6A, 10V
Series-
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?12V
Vgs(th) (Max) @ Id1.2V @ 250?A
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