Attributes

Key Value
@Ic (test) (A)100m
@VCE (V)1.0
CaseTO92
Derate (Amb) (W/?C)20m
Forward Current Transfe.40
Ic Max. (A)500m
Icbo Max. @Vcb Max. (A)100n
ManufacturerMotorola Semiconductor
Max. hFE400
Max. Operating Junction.150 ?C
Max. PD (W)2.5
Maximum Collector Curre.1 A
Maximum Collector Power.1 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.60 V
Maximum Emitter-Base Vo.5 V
Min hFE40
Oper. Temp (?C) Max.140
Pinout Equivalence Numb.3-12
PolarityPNP
SKU1267345
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.50M
Transition Frequency (f.50 MHz
TypeTransistor Silicon PNP
Vbr CEO60
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