Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.42A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60 nC @ 10 V
Input Capacitance (Ciss.1720 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-252-3, DPak (2 Leads.
Part StatusDiscontinued at Digi-Key
Power Dissipation (Max)91W (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 37A, 10V
SeriesHEXFET?
Supplier Device PackageD-PAK (TO-252AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 50?A
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