Attributes

Key Value
@Ic (A)10m
@VCE (test) (V)1.0
C(ob) (F)7.5p
CaseSOT23
Collector Capacitance (.13 pF
Derate (Amb) (W/?C)1.2m
Forward Current Transfe.110
hfe110
Ic Max. (A)100m
Icbo Max. @Vcb Max. (A)100n
ManufacturerNEC
Max. Operating Junction.150 ?C
Max. PD (W)150m
Maximum Collector Curre.0.1 A
Maximum Collector Power.0.15 W
Maximum Collector-Base .60 V
Maximum Collector-Emitt.40 V
Maximum Emitter-Base Vo.8 V
Oper. Temp (?C) Max.125
Pinout Equivalence Numb.3-12
PolarityPNP
SKU557706
SMD Transistor CodeH4
Surface Mounted Yes/NoYES
t(f) Max. (S)270n-+
t(stor) Max. (S)200n-
Tr Max. (s)100n-
Trans. Freq (Hz) Min.280M
Transition Frequency (f.280 MHz
TypeTransistor Silicon PNP
Vbr CBO60
Vbr CEO40
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