Vishay Siliconix IRFIB8N50KPBF

mpnIRFIB8N50KPBF
brandname: Vishay Siliconix
manufacturername: Vishay Siliconix

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	6.7A (Tc)
Drain to Source Voltage.	500 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	89 nC @ 10 V
Input Capacitance (Ciss.	2160 pF @ 25 V
Mfr	Vishay Siliconix
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tube
Package / Case	TO-220-3 Full Pack, Iso.
Part Status	Obsolete
Power Dissipation (Max)	45W (Tc)
Rds On (Max) @ Id, Vgs	350mOhm @ 4A, 10V
Series	-
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	5V @ 250?A