SILICONIX (VISHAY) SI5415AEDU-T1-GE3

B078Z3YFVR

SILICONIX (VISHAY) SI5415AEDU-T1-GE3 P-Channel 20 V 9.6 m? 80 nC 3.1 W SMT Power Mosfet - PowerPAK CHIPFET - 3000 item(s)

SILICONIX (VISHAY) SI5415AEDU-T1-GE3 P-Channel 20 V 9.6 m? 80 nC 3.1 W SMT Power Mosfet - PowerPAK CHIPFET - 3000 item(s)zoom

Attributes

Key Value
Base Product NumberSI5415
CategoryDiscrete Semiconductor .
Current - Continuous Dr.25A (Tc)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .120 nC @ 8 V
Input Capacitance (Ciss.4300 pF @ 10 V
MfrVishay Siliconix
Mounting TypeSurface Mount
Operating Temperature-50?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CasePowerPAK? ChipFET? Sing.
Power Dissipation (Max)3.1W (Ta), 31W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs9.6mOhm @ 10A, 4.5V
SeriesTrenchFET?
Supplier Device PackagePowerPAK? ChipFet Single
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A
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