Attributes

Key Value
Categories Discrete Semiconductor.
Current - Continuous Dr. 28A (Tc)
Drain to Source Voltage. 600V
Drive Voltage (Max Rds . 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) . 120nC @ 10V
Input Capacitance (Ciss. 2714pF @ 100V
Lead Free Status / RoHS. Lead free / RoHS Compl.
Manufacturer Vishay Siliconix
Manufacturer Part Number SIHP28N60EF-GE3
Moisture Sensitivity Le. 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55?C ~ 150?C (TJ)
Package / Case TO-220-3
Packaging Tube
Power Dissipation (Max) 250W (Tc)
Rds On (Max) @ Id, Vgs 123mOhm @ 14A, 10V
Series -
Standard Package 1,000
Supplier Device Package TO-220AB
Technology MOSFET (Metal Oxide)
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