Attributes

Key Value
Base Product NumberSUP70030
CategoryDiscrete Semiconductor .
Current - Continuous Dr.150A (Tc)
DescriptionMOSFET N-CH 100V 150A T.
Detailed DescriptionN-Channel 100 V 150A (T.
Digi-Key Part NumberSUP70030E-GE3-ND
Drain to Source Voltage.100 V
Drive Voltage (Max Rds .7.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .214 nC @ 10 V
Input Capacitance (Ciss.10870 pF @ 50 V
ManufacturerVishay Siliconix
Manufacturer Product Nu.SUP70030E-GE3
Manufacturer Standard L.26 Weeks
MfrVishay Siliconix
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)375W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs3.18mOhm @ 30A, 10V
SeriesTrenchFET?
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A
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