Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.10V
Drain to Source Voltage.29 nC @ 10 V
Drive Voltage (Max Rds .299mOhm @ 6.6A, 10V
FET Feature96W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .1.1 pF @ 100 V
MfrInfineon Technologies
Mounting TypePG-TO262-3
Operating TemperatureThrough Hole
PackageObsolete
Package / Case600 V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 150?C (TJ)
Rds On (Max) @ Id, Vgs3.5V @ 440?A
SeriesTube
Supplier Device PackageTO-262-3 Long Leads, I?.
Technology11A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?20V
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