Attributes

Key Value
Base Product NumberIPZ60R099
CategoryDiscrete Semiconductor .
Current - Continuous Dr.37.9A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .70 nC @ 10 V
Input Capacitance (Ciss.3330 pF @ 100 V
MfrInfineon Technologies
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-4
Part StatusActive
Power Dissipation (Max)278W (Tc)
Rds On (Max) @ Id, Vgs99mOhm @ 14.5A, 10V
SeriesCoolMOS? P6
Supplier Device PackagePG-TO247-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.5V @ 1.21mA
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