Attributes

Key Value
Base Product NumberIRF8302
CategoryDiscrete Semiconductor .
Current - Continuous Dr.31A (Ta), 190A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .53 nC @ 4.5 V
Input Capacitance (Ciss.6030 pF @ 15 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-40?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseDirectFET? Isometric MX
Part StatusObsolete
Power Dissipation (Max)2.8W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs1.8mOhm @ 31A, 10V
SeriesHEXFET?
Supplier Device PackageDIRECTFET? MX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.35V @ 150?A
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