Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.21A (Ta), 40A (Tc)
Drain to Source Voltage.30 V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .31 nC @ 10 V
Input Capacitance (Ciss.2155 pF @ 25 V
MfrInfineon Technologies
Mounting TypeSurface Mount
PackageCut Tape (CT)
Package / Case8-VQFN Exposed Pad
Product StatusObsolete
Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
Series-
Supplier Device PackagePQFN (3x3)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.35V @ 50?A
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