B07NHS4MNS

IRFHM8337TRPBF, Trans MOSFET N-CH 30V 12A 8-Pin PQFN EP T/R (50 Items)

Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.12A (Ta)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .8.1 nC @ 4.5 V
Input Capacitance (Ciss.755 pF @ 15 V
MfrInfineon Technologies
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power Dissipation (Max)2.8W (Ta), 25W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs12.4mOhm @ 12A, 10V
SeriesHEXFET?
Supplier Device Package8-PQFN (3.3x3.3), Power.
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.35V @ 25?A

All Prices

Img Seller Supplier SKU Min Price MOQ In Stock Lead Time Brand Weight Preferred Tier
Future Electronics30399600.246400050Infineon0.246 @ 4000
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