Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.75A (Tc)
Drain to Source Voltage.55 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .60 nC @ 5 V
Input Capacitance (Ciss.2880 pF @ 25 V
MfrInternational Rectifier
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 175?C (TJ)
PackageBulk
Package / CaseTO-220-3
Power Dissipation (Max)130W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs8mOhm @ 52A, 10V
SeriesHEXFET?
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?16V
Vgs(th) (Max) @ Id3V @ 250?A
prev