Nexperia USA Inc. PMPB08R6ENX

mpnPMPB08R6ENX
brandname: Nexperia USA Inc.
manufacturername: Nexperia USA Inc.

Attributes

Key	Value
Base Product Number	PMPB08
Category	Discrete Semiconductor .
Current - Continuous Dr.	11A (Ta)
Drain to Source Voltage.	30 V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	20.6 nC @ 10 V
Input Capacitance (Ciss.	840 pF @ 15 V
Mfr	Nexperia USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.9W (Ta), 12.5W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	10.5mOhm @ 11A, 10V
Series	TrenchMOS?
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 250?A