NXP USA Inc. PHD45N03LTA,118

mpnPHD45N03LTA,118
brandname: NXP USA Inc.
manufacturername: NXP USA Inc.

Attributes

Key	Value
Base Product Number	PHD45
Category	Discrete Semiconductor .
Current - Continuous Dr.	40A (Tc)
Drain to Source Voltage.	25 V
Drive Voltage (Max Rds .	3.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	19 nC @ 5 V
Input Capacitance (Ciss.	700 pF @ 25 V
Mfr	NXP USA Inc.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads.
Part Status	Obsolete
Power Dissipation (Max)	65W (Tc)
Rds On (Max) @ Id, Vgs	21mOhm @ 25A, 10V
Series	TrenchMOS?
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2V @ 1mA