Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.4.5V, 10V
Drain to Source Voltage.48nC @ 10V
Drive Voltage (Max Rds .17mOhm @ 25A, 10V
FET Feature3.9W (Ta), 100W (Tc)
FET TypeMOSFET (Metal Oxide)
Gate Charge (Qg) (Max) .1.41pF @ 25V
MfrON Semiconductor
Mounting TypeDPAK (SINGLE GAUGE)
Operating TemperatureSurface Mount
PackageActive
Package / Case60V
Part StatusN-Channel
Power Dissipation (Max)-55?C ~ 175?C (TJ)
Rds On (Max) @ Id, Vgs2.5V @ 250?A
SeriesBulk
Supplier Device PackageTO-252-3, DPak (2 Leads.
Technology10.7A (Ta), 54A (Tc)
Vgs (Max)-
Vgs(th) (Max) @ Id?20V
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